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Hoffmann, R. A wiki for the life sciences where authorship matters. Nature Genetics (2008)
 
 
 
 
 

Nanomechanics: response of a strained semiconductor structure.

The nanomechanical properties of thin silicon films will become increasingly critical in semiconductor devices, particularly in the context of substrates that consist of a silicon film on an insulating layer (known as silicon-on-insulator, or SOI, substrates). Here we use very small germanium crystals as a new type of nanomechanical stressor to demonstrate a surprising mechanical behaviour of the thin layer of silicon in SOI substrates, and to show that there is a large local reduction in the viscosity of the oxide on which the silicon layer rests. These findings have implications for the use of SOI substrates in nanoelectronic devices.[1]

References

  1. Nanomechanics: response of a strained semiconductor structure. Liu, F., Rugheimer, P., Mateeva, E., Savage, D.E., Lagally, M.G. Nature (2002) [Pubmed]
 
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