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Hoffmann, R. A wiki for the life sciences where authorship matters. Nature Genetics (2008)
 
 
 
 
 

Morphology- and orientation-controlled gallium arsenide nanowires on silicon substrates.

GaAs nanowires were epitaxially grown on Si(001) and Si(111) substrates by using Au-catalyzed vapor-liquid-solid (VLS) growth in a solid source molecular beam epitaxy system. Scanning electron microscopy analysis revealed that almost all the GaAs nanowires were grown along 111 directions on both Si substrates for growth conditions investigated. The GaAs nanowires had a very uniform diameter along the growth direction. X-ray diffraction data and transmission electron microscopy analysis revealed that the GaAs111 nanowires had a mixed crystal structure of the hexagonal wurtzite and the cubic zinc-blende. Current-voltage characteristics of junctions formed by the epitaxially grown GaAs nanowires and the Si substrate were investigated by using a current-sensing atomic force microscopy.[1]

References

  1. Morphology- and orientation-controlled gallium arsenide nanowires on silicon substrates. Ihn, S.G., Song, J.I., Kim, T.W., Leem, D.S., Lee, T., Lee, S.G., Koh, E.K., Song, K. Nano Lett. (2007) [Pubmed]
 
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