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Hoffmann, R. A wiki for the life sciences where authorship matters. Nature Genetics (2008)
 

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Air-assisted high-performance field-effect transistor with thin films of picene.

A field-effect transistor (FET) with thin films of picene has been fabricated on SiO2 gate dielectric. The FET showed p-channel enhancement-type FET characteristics with the field-effect mobility, mu, of 1.1 cm2 V-1 s-1 and the on-off ratio of >10(5). This excellent device performance was realized under atmospheric conditions. The mu increased with an increase in temperature, and the FET performance was improved by exposure to air or O2 for a long time. This result implies that this device is an air (O2)-assisted FET. The FET characteristics are discussed on the basis of structural topography and the energy diagram of picene thin films.[1]

References

  1. Air-assisted high-performance field-effect transistor with thin films of picene. Okamoto, H., Kawasaki, N., Kaji, Y., Kubozono, Y., Fujiwara, A., Yamaji, M. J. Am. Chem. Soc. (2008) [Pubmed]
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