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IR detection of NO2 using p+ porous silicon as a high sensitivity sensor.

Mesoporous silicon doped with 3.0 x 10(19) B atoms cm-3 (p(+)-type) is an insulating material which dramatically increases its electrical conductivity when exposed to traces of gaseous NO2; nitrogen dioxide chemisorption at the surface generates carriers, the population of which is readily evaluated through the intensity of IR absorption.[1]

References

  1. IR detection of NO2 using p+ porous silicon as a high sensitivity sensor. Geobaldo, F., Onida, B., Rivolo, P., Borini, S., Boarino, L., Rossi, A., Amato, G., Garrone, E. Chem. Commun. (Camb.) (2001) [Pubmed]
 
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