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Hoffmann, R. A wiki for the life sciences where authorship matters. Nature Genetics (2008)
 
 
 

Electron energy-loss spectroscopy study of thin film hafnium aluminates for novel gate dielectrics.

We have used conventional high-resolution transmission electron microscopy and electron energy-loss spectroscopy (EELS) in scanning transmission electron microscopy to investigate the microstructure and electronic structure of hafnia-based thin films doped with small amounts (6.8 at.%) of Al grown on (001) Si. The as-deposited film is amorphous with a very thin (approximately 0.5 nm) interfacial SiOx layer. The film partially crystallizes after annealing at 700 degrees C and the interfacial SiO2-like layer increases in thickness by oxygen diffusion through the Hf-aluminate layer and oxidation of the silicon substrate. Oxygen K-edge EELS fine-structures are analysed for both films and interpreted in the context of the films' microstructure. We also discuss valence electron energy-loss spectra of these ultrathin films.[1]

References

  1. Electron energy-loss spectroscopy study of thin film hafnium aluminates for novel gate dielectrics. Stemmer, S., Chen, Z.Q., Zhu, W.J., Ma, T.P. Journal of microscopy. (2003) [Pubmed]
 
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