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Surface and interface studies of GaN epitaxy on Si(111) via buffer layers.

Gallium nitride films, epitaxially grown on Si(111) via a lattice-matched ZrB(2) buffer layer by plasma-assisted molecular beam epitaxy, have been studied in situ by noncontact atomic force microscopy and also in real time by reflection high-energy electron diffraction. The grown films were determined to be always N-polar. First-principles theoretical calculations modeling the interface structure between GaN(0001) and ZrB(2)(0001) clarify the origin of the N polarity.[1]

References

  1. Surface and interface studies of GaN epitaxy on Si(111) via buffer layers. Yamada-Takamura, Y., Wang, Z.T., Fujikawa, Y., Sakurai, T., Xue, Q.K., Tolle, J., Liu, P.L., Chizmeshya, A.V., Kouvetakis, J., Tsong, I.S. Phys. Rev. Lett. (2005) [Pubmed]
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