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Chemical Compound Review:

nitridogallium azanylidynegallane

Synonyms: LS-71062, AC1L3L4B, 481769_ALDRICH, 12024-03-2, 25617-97-4, ...

Young, T.H. et al., Yamada-Takamura, Y. et al., Yagi, S. et al., Kako, S. et al.

Yagi, Iwanaga, Kojima, Shoji, Suzuki, Seno, Mori, Tokura, Takigawa, Moriwaki, Young, Chen,

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Disease relevance of azanylidynegallane

We have developed a UV monitor with polycrystalline (poly-) gallium nitride (GaN) UV sensors and evaluated its performance from the viewpoint of its effectiveness for use with photosensitive dermatosis patients [1].

High impact information on azanylidynegallane

Compared with silicon used for most neural chips, neurons seeded on GaN were able to form an extensive neuritic network and expressed very high levels of GAP-43 coincident with the neurite outgrowth [2].

Analytical, diagnostic and therapeutic context of azanylidynegallane

Gallium nitride films, epitaxially grown on Si(111) via a lattice-matched ZrB(2) buffer layer by plasma-assisted molecular beam epitaxy, have been studied in situ by noncontact atomic force microscopy and also in real time by reflection high-energy electron diffraction [3].
The favorable biocompatibility characteristics of GaN can be used to measure electric signals from networks of neuronal cells in culture to make it a possible candidate for use in a microelectrode array [2].
Gallium nitride quantum dots also open a new wavelength region in the blue and near-ultraviolet portions of the spectrum for single-photon sources [4].

References

UV dose measurements of photosensitive dermatosis patients by polycrystalline GaN-based portable self-data-acquisition UV monitors. Yagi, S., Iwanaga, T., Kojima, H., Shoji, Y., Suzuki, S., Seno, K., Mori, H., Tokura, Y., Takigawa, M., Moriwaki, S. Photochem. Photobiol. (2002) [Pubmed]
Assessment of GaN chips for culturing cerebellar granule neurons. Young, T.H., Chen, C.R. Biomaterials (2006) [Pubmed]
Surface and interface studies of GaN epitaxy on Si(111) via buffer layers. Yamada-Takamura, Y., Wang, Z.T., Fujikawa, Y., Sakurai, T., Xue, Q.K., Tolle, J., Liu, P.L., Chizmeshya, A.V., Kouvetakis, J., Tsong, I.S. Phys. Rev. Lett. (2005) [Pubmed]
A gallium nitride single-photon source operating at 200 K. Kako, S., Santori, C., Hoshino, K., G??tzinger, S., Yamamoto, Y., Arakawa, Y. Nature materials. (2006) [Pubmed]

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